SMBJ110 vs CD214B-T110ALF feature comparison

SMBJ110 Galaxy Semi-Conductor Co Ltd

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CD214B-T110ALF Bourns Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD BOURNS INC
Package Description R-PDSO-J2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 149 V 140 V
Breakdown Voltage-Min 122 V 122 V
Breakdown Voltage-Nom 135.5 V
Clamping Voltage-Max 196 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
Samacsys Manufacturer Bourns
JESD-609 Code e3
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare SMBJ110 with alternatives

Compare CD214B-T110ALF with alternatives