SMBJ10 vs SMBJ10/TR7 feature comparison

SMBJ10 Diodes Incorporated

Buy Now Datasheet

SMBJ10/TR7 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-J2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 14.1 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.4 V
Clamping Voltage-Max 18.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 400 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 23 3
Pbfree Code No
Rohs Code No
Part Package Code DO-214AA
Pin Count 2
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W

Compare SMBJ10 with alternatives

Compare SMBJ10/TR7 with alternatives