SMBGP6KE68CE3 vs MSPSMBJ54CE3 feature comparison

SMBGP6KE68CE3 Microsemi Corporation

Buy Now Datasheet

MSPSMBJ54CE3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-G2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 74.8 V 73.3 V
Breakdown Voltage-Min 61.2 V 60 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-214AA
JESD-30 Code R-PDSO-G2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 55.1 V 54 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 14 2
Rohs Code Yes
Part Package Code DO-214AA
Pin Count 2
Breakdown Voltage-Nom 66.65 V
Clamping Voltage-Max 96.3 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reference Standard MIL-19500
Terminal Finish MATTE TIN

Compare SMBGP6KE68CE3 with alternatives

Compare MSPSMBJ54CE3 with alternatives