SMAJ60
vs
SMAJ13A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
GENERAL INSTRUMENT CORP
PULSE ELECTRONICS CORP
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Max
81.5 V
15.9 V
Breakdown Voltage-Min
66.7 V
14.4 V
Clamping Voltage-Max
107 V
21.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
3.3 W
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
1 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
6
Rohs Code
Package Description
SMA, 2 PIN
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Nom
15.15 V
JEDEC-95 Code
DO-214AC
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
UL CERTIFIED
Rep Pk Reverse Voltage-Max
13 V
Reverse Test Voltage
13 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SMAJ60 with alternatives
Compare SMAJ13A with alternatives