SMAJ10 vs SMAJ10A-T3 feature comparison

SMAJ10 RFE International Inc

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SMAJ10A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer RFE INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 12.35 V
Clamping Voltage-Max 18.8 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 4 1
Rohs Code No
Package Description R-PDSO-C2
Breakdown Voltage-Max 12.27 V
Breakdown Voltage-Min 11.1 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare SMAJ10 with alternatives

Compare SMAJ10A-T3 with alternatives