SMAJ10A-T3 vs SMAJ10AE3/TR13 feature comparison

SMAJ10A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMAJ10AE3/TR13 Microchip Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROCHIP TECHNOLOGY INC
Package Description R-PDSO-C2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 12.27 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Factory Lead Time 20 Weeks
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Terminal Finish PURE MATTE TIN

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Compare SMAJ10AE3/TR13 with alternatives