SM15T68A
vs
SMCJ64A-E3/9AT
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
GENERAL INSTRUMENT CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
71.4 V
78.6 V
Breakdown Voltage-Min
64.6 V
71.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
6
2
Pbfree Code
Rohs Code
Part Package Code
DO-214AB
Package Description
R-PDSO-C2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
74.85 V
Clamping Voltage-Max
103 V
Forward Voltage-Max (VF)
3.5 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
64 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare SM15T68A with alternatives
Compare SMCJ64A-E3/9AT with alternatives