BSC520N15NS3G vs BSC360N15NS3G feature comparison

BSC520N15NS3G Infineon Technologies AG

Buy Now Datasheet

BSC360N15NS3G Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Pin Count 8 8
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 60 mJ 80 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 21 A 33 A
Drain-source On Resistance-Max 0.052 Ω 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PDSO-N8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W 74 W
Pulsed Drain Current-Max (IDM) 84 A 132 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description TDSON-8

Compare BSC520N15NS3G with alternatives

Compare BSC360N15NS3G with alternatives