SIHH21N65EF-T1-GE3
vs
IPB60R190C6XT
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
SMALL OUTLINE, S-PSSO-N4
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
18 Weeks
|
15 Weeks
|
| Samacsys Manufacturer |
Vishay
|
|
| Avalanche Energy Rating (Eas) |
353 mJ
|
418 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
650 V
|
600 V
|
| Drain Current-Max (ID) |
19.8 A
|
20.2 A
|
| Drain-source On Resistance-Max |
0.18 Ω
|
0.19 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PSSO-N4
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
53 A
|
59 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-263AB
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare SIHH21N65EF-T1-GE3 with alternatives
Compare IPB60R190C6XT with alternatives