SIHH21N65EF-T1-GE3
vs
TK20E60U
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
TOSHIBA CORP
Package Description
SMALL OUTLINE, S-PSSO-N4
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
19 Weeks
Samacsys Manufacturer
Vishay
Toshiba
Avalanche Energy Rating (Eas)
353 mJ
144 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
600 V
Drain Current-Max (ID)
19.8 A
20 A
Drain-source On Resistance-Max
0.18 Ω
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PSSO-N4
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
4
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
53 A
40 A
Surface Mount
YES
NO
Terminal Form
NO LEAD
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
JEDEC-95 Code
TO-220AB
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
190 W
Compare SIHH21N65EF-T1-GE3 with alternatives
Compare TK20E60U with alternatives