SIHB22N60EL-GE3
vs
SPB20N60S5E3045
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
GREEN, PLASTIC, TO-263, 3 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
21 Weeks
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Avalanche Energy Rating (Eas) |
286 mJ
|
690 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
600 V
|
| Drain Current-Max (ID) |
21 A
|
20 A
|
| Drain-source On Resistance-Max |
0.197 Ω
|
0.19 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
45 A
|
40 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
AVALANCHE RATED
|
|
|
|
Compare SIHB22N60EL-GE3 with alternatives
Compare SPB20N60S5E3045 with alternatives