SIHB22N60EL-GE3
vs
STI24NM65N
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
STMICROELECTRONICS
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
IN-LINE, R-PSIP-T3
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
18 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
STMicroelectronics
|
Avalanche Energy Rating (Eas) |
286 mJ
|
500 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
650 V
|
Drain Current-Max (ID) |
21 A
|
19 A
|
Drain-source On Resistance-Max |
0.197 Ω
|
0.19 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-262AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
45 A
|
76 A
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-262AA
|
Pin Count |
|
3
|
JESD-609 Code |
|
e3
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
160 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare SIHB22N60EL-GE3 with alternatives
Compare STI24NM65N with alternatives