SIA432DJ-T1-GE3
vs
2N5785N1
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
TT ELECTRONICS PLC
|
| Part Package Code |
SC-70
|
|
| Package Description |
SMALL OUTLINE, S-PDSO-C3
|
|
| Pin Count |
6
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Drain Current-Max (ID) |
12 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
S-PDSO-C3
|
R-MBCC-N3
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
NPN
|
| Power Dissipation-Max (Abs) |
19.2 W
|
25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
C BEND
|
NO LEAD
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Case Connection |
|
COLLECTOR
|
| Collector Current-Max (IC) |
|
3.5 A
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| DC Current Gain-Min (hFE) |
|
4
|
| JEDEC-95 Code |
|
TO-276AA
|
| Operating Temperature-Min |
|
-65 °C
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
15000 ns
|
| Turn-on Time-Max (ton) |
|
5000 ns
|
| VCEsat-Max |
|
2 V
|
|
|
|
Compare SIA432DJ-T1-GE3 with alternatives
Compare 2N5785N1 with alternatives