SI6966DQ-T1-E3
vs
JAN2N5545
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY SILICONIX
|
| Part Package Code |
TSSOP
|
TO-71
|
| Package Description |
TSSOP-8
|
CYLINDRICAL, O-MBCY-W6
|
| Pin Count |
8
|
6
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS
|
| DS Breakdown Voltage-Min |
20 V
|
|
| Drain Current-Max (ID) |
4 A
|
|
| Drain-source On Resistance-Max |
0.03 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JESD-30 Code |
R-PDSO-G8
|
O-MBCY-W6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
8
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
ISOLATED
|
| Reference Standard |
|
MIL-19500/430B
|
|
|
|
Compare SI6966DQ-T1-E3 with alternatives
Compare JAN2N5545 with alternatives