SI4463CDY-T1-GE3 vs SI4463CDY-T1-GE3 feature comparison

SI4463CDY-T1-GE3 Vishay Siliconix

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SI4463CDY-T1-GE3 Vishay Intertechnologies

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Part Life Cycle Code Transferred Active
Ihs Manufacturer VISHAY SILICONIX VISHAY INTERTECHNOLOGY INC
Part Package Code SOIC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Pin Count 8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 18.6 A 18.6 A
Drain-source On Resistance-Max 0.008 Ω 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 16 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 5 W
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30