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Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64T4067
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Newark | Mosfet, P Channel, W/D, 20V, 18.6A, So8, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:18.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Vishay SI4463CDY-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 31190 |
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$0.6720 / $1.0100 | Buy Now |
DISTI #
67X6865
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Newark | Mosfet Transistor, P Channel, -18.6 A, -20 V, 0.006 Ohm, -10 V, -600 Mv |Vishay SI4463CDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3600 / $0.4240 | Buy Now |
DISTI #
SI4463CDY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 13.6A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3645 / $0.4631 | Buy Now |
DISTI #
78-SI4463CDY-T1-GE3
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Mouser Electronics | MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant | 138386 |
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$0.3380 / $0.9000 | Buy Now |
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Future Electronics | P-Channel 60 V 0.008 Ohm 5 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 2500Reel |
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$0.3450 / $0.3700 | Buy Now |
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Future Electronics | P-Channel 60 V 0.008 Ohm 5 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3300 / $0.3500 | Buy Now |
DISTI #
77832624
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Verical | Trans MOSFET P-CH 20V 18.6A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2346 | Americas - 2500 |
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$0.3593 | Buy Now |
DISTI #
SI4463CDY-T1-GE3
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TTI | MOSFET -20V Vds 12V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 15000 In Stock |
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$0.3250 / $0.3520 | Buy Now |
DISTI #
SI4463CDY-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -18.6A, Idm: -60A Min Qty: 1 | 0 |
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$0.4720 / $0.8680 | RFQ |
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Chip1Cloud | MOSFET P-CHAN 2.5V SO8 | 7000 |
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RFQ |
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SI4463CDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4463CDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 18.6 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |