SI4164DY-T1-GE3
vs
FDS6699S
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
End Of Life
Ihs Manufacturer
VISHAY SILICONIX
ONSEMI
Part Package Code
SOT
SOIC-8
Package Description
ROHS COMPLIANT, SOP-8
SO-8
Pin Count
8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
21.5 A
21 A
Drain-source On Resistance-Max
0.0032 Ω
0.0036 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Manufacturer Package Code
751EB
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
2.5 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SI4164DY-T1-GE3 with alternatives
Compare FDS6699S with alternatives