SI3457BDV-T1-E3 vs SI3457BDV-T1 feature comparison

SI3457BDV-T1-E3 Vishay Siliconix

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SI3457BDV-T1 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SILICONIX VISHAY INTERTECHNOLOGY INC
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6 ,
Pin Count 6
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.7 A 3.7 A
Drain-source On Resistance-Max 0.054 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2 W 2 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Base Number Matches 2 2

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