SI3457BDV-T1-E3
vs
2N5197
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
HARRIS SEMICONDUCTOR
|
| Package Description |
TSOP-6
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
3.7 A
|
|
| Drain-source On Resistance-Max |
0.054 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JESD-30 Code |
R-PDSO-G6
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
6
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
16
|
|
|
|
Compare SI3457BDV-T1-E3 with alternatives