SI3457BDV-T1
vs
PMN34UN,135
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
VISHAY SILICONIX
NXP SEMICONDUCTORS
Part Package Code
TSOP
TSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
PLASTIC, SC-74, 6 PIN
Pin Count
6
6
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
3.7 A
4.9 A
Drain-source On Resistance-Max
0.054 Ω
0.054 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Manufacturer Package Code
SOT457
HTS Code
8541.29.00.75
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
1.75 W
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare SI3457BDV-T1 with alternatives
Compare PMN34UN,135 with alternatives