SHDC225456 vs IPB35N10S3L26ATMA1 feature comparison

SHDC225456 Sensitron Semiconductors

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IPB35N10S3L26ATMA1 Infineon Technologies AG

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer SENSITRON SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Part Package Code TO-254AA
Package Description FLANGE MOUNT, S-XSFM-P3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 35 A 35 A
Drain-source On Resistance-Max 0.03 Ω 0.0322 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA TO-263AB
JESD-30 Code S-XSFM-P3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Form PIN/PEG GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 175 mJ
Feedback Cap-Max (Crss) 75 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 140 A
Reference Standard AEC-Q101; IEC-68-1
Terminal Finish Tin (Sn)

Compare SHDC225456 with alternatives

Compare IPB35N10S3L26ATMA1 with alternatives