SHD21810B
vs
IRF9230
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
SMALL OUTLINE, R-CSSO-G2
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
|
| Drain Current-Max (ID) |
11 A
|
6.5 A
|
| Drain-source On Resistance-Max |
0.5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CSSO-G2
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
125 W
|
|
| Power Dissipation-Max (Abs) |
125 W
|
75 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
9
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare SHD21810B with alternatives
Compare IRF9230 with alternatives