SFN10A350 vs IDH12G65C6XKSA1 feature comparison

SFN10A350 Kodenshi Corporation

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IDH12G65C6XKSA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer KODENSHI AUK CORP INFINEON TECHNOLOGIES AG
Package Description R-PSFM-T2 R-PSFM-T2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE PD-CASE
Application ULTRA FAST RECOVERY POWER EFFICIENCY
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.35 V 1.35 V
JEDEC-95 Code TO-220AC TO-220AC
JESD-30 Code R-PSFM-T2 R-PSFM-T2
Non-rep Pk Forward Current-Max 120 A 51 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 10 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 350 V 650 V
Reverse Current-Max 5 µA 40 µA
Reverse Recovery Time-Max 0.025 µs
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
JESD-609 Code e3
Operating Temperature-Min -55 °C
Power Dissipation-Max 81 W
Technology SCHOTTKY
Terminal Finish Tin (Sn)

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Compare IDH12G65C6XKSA1 with alternatives