SFF250ZTX
vs
MTV32N20E-RL
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
SOLID STATE DEVICES INC
|
MOTOROLA INC
|
Part Package Code |
TO-254
|
|
Package Description |
FLANGE MOUNT, S-XSFM-P3
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
30 A
|
32 A
|
Drain-source On Resistance-Max |
0.085 Ω
|
0.075 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-254
|
|
JESD-30 Code |
S-XSFM-P3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
125 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Form |
PIN/PEG
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
810 mJ
|
Case Connection |
|
DRAIN
|
Feedback Cap-Max (Crss) |
|
1000 pF
|
Power Dissipation Ambient-Max |
|
180 W
|
Pulsed Drain Current-Max (IDM) |
|
128 A
|
Turn-off Time-Max (toff) |
|
332 ns
|
Turn-on Time-Max (ton) |
|
290 ns
|
|
|
|
Compare SFF250ZTX with alternatives
Compare MTV32N20E-RL with alternatives