MTV32N20E-RL
vs
SFF250ZDBS
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MOTOROLA INC
|
SOLID STATE DEVICES INC
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
FLANGE MOUNT, S-XSFM-P3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
810 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
32 A
|
30 A
|
Drain-source On Resistance-Max |
0.075 Ω
|
0.085 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
1000 pF
|
|
JESD-30 Code |
R-PSSO-G2
|
S-XSFM-P3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
180 W
|
|
Pulsed Drain Current-Max (IDM) |
128 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
PIN/PEG
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
332 ns
|
|
Turn-on Time-Max (ton) |
290 ns
|
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
TO-254
|
Pin Count |
|
3
|
JEDEC-95 Code |
|
TO-254
|
Power Dissipation-Max (Abs) |
|
125 W
|
|
|
|
Compare MTV32N20E-RL with alternatives
Compare SFF250ZDBS with alternatives