SDF506
vs
FDC855N
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SOLITRON DEVICES INC
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Additional Feature
LOW NOISE
Configuration
SEPARATE, 2 ELEMENTS
SINGLE WITH BUILT-IN DIODE
FET Technology
JUNCTION
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
1.8 pF
95 pF
JEDEC-95 Code
TO-71
MO-193AA
JESD-30 Code
O-MBCY-W6
R-PDSO-G6
Number of Elements
2
1
Number of Terminals
6
6
Operating Mode
DEPLETION MODE
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.5 W
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
BOTTOM
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
SOT
Package Description
ROHS COMPLIANT, SUPERSOT-6
Pin Count
6
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
6.1 A
Drain-source On Resistance-Max
0.027 Ω
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare SDF506 with alternatives
Compare FDC855N with alternatives