FDC855N
vs
SI1069X-T1-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
VISHAY SILICONIX
Part Package Code
SOT
SC-89
Package Description
ROHS COMPLIANT, SUPERSOT-6
SMALL OUTLINE, R-PDSO-F6
Pin Count
6
6
Reach Compliance Code
unknown
unknown
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
20 V
Drain Current-Max (ID)
6.1 A
0.94 A
Drain-source On Resistance-Max
0.027 Ω
0.184 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
95 pF
JEDEC-95 Code
MO-193AA
JESD-30 Code
R-PDSO-G6
R-PDSO-F6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
ECCN Code
EAR99
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.236 W
Compare FDC855N with alternatives
Compare SI1069X-T1-GE3 with alternatives