SDB103
vs
S1ZB60-4062
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL SEMICONDUCTOR INC
|
SHINDENGEN ELECTRIC MANUFACTURING CO LTD
|
| Package Description |
R-PDSO-G4
|
R-XDIP-T4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.70
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.05 V
|
| JESD-30 Code |
R-PDSO-G4
|
R-XDIP-T4
|
| Non-rep Pk Forward Current-Max |
50 A
|
30 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Output Current-Max |
1 A
|
0.5 A
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
600 V
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
6
|
1
|
| Rohs Code |
|
Yes
|
| Breakdown Voltage-Min |
|
600 V
|
| JESD-609 Code |
|
e6
|
| Reverse Current-Max |
|
0.00001 µA
|
| Terminal Finish |
|
TIN BISMUTH
|
|
|
|
Compare SDB103 with alternatives
Compare S1ZB60-4062 with alternatives