SD5001N
vs
SD5200N
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
UNIVERSAL SEMICONDUCTOR INC
|
UNIVERSAL SEMICONDUCTOR INC
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
PLASTIC, DIP-16
|
IN-LINE, R-PDIP-T16
|
| Pin Count |
16
|
16
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW INSERTION LOSS
|
LOW INSERTION LOSS
|
| Configuration |
COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
10 V
|
30 V
|
| Drain Current-Max (ID) |
0.05 A
|
0.05 A
|
| Drain-source On Resistance-Max |
70 Ω
|
80 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
0.5 pF
|
0.5 pF
|
| JESD-30 Code |
R-PDIP-T16
|
R-PDIP-T16
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
16
|
16
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
85 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare SD5001N with alternatives
Compare SD5200N with alternatives