SA70C
vs
SA70C_B0_10001
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max
95.1 V
98.6 V
Breakdown Voltage-Min
77.8 V
77.8 V
Breakdown Voltage-Nom
86.45 V
88.2 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
125 V
125 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-15
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-50 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
Rep Pk Reverse Voltage-Max
70 V
70 V
Reverse Current-Max
1 µA
Reverse Test Voltage
70 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
48
1
Pbfree Code
Rohs Code
Package Description
O-PALF-W2
JESD-609 Code
e3
Terminal Finish
TIN
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