S71WS512NC0BFWAP0
vs
S71WS512NC0BAWAP1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
SPANSION INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| Access Time-Max |
80 ns
|
|
| JESD-30 Code |
R-PBGA-B84
|
R-PBGA-B84
|
| Memory IC Type |
MEMORY CIRCUIT
|
MEMORY CIRCUIT
|
| Mixed Memory Type |
FLASH+PSRAM
|
|
| Number of Terminals |
84
|
84
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-25 °C
|
-25 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
FBGA
|
TFBGA
|
| Package Equivalence Code |
BGA84,10X12,32
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Power Supplies |
1.8 V
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Current-Max |
0.00007 A
|
|
| Supply Current-Max |
0.054 mA
|
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
3
|
1
|
| Part Package Code |
|
BGA
|
| Package Description |
|
TFBGA,
|
| Pin Count |
|
84
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8542.32.00.71
|
| Additional Feature |
|
PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
|
| JESD-609 Code |
|
e1
|
| Length |
|
11.6 mm
|
| Memory Density |
|
536870912 bit
|
| Memory Width |
|
16
|
| Moisture Sensitivity Level |
|
3
|
| Number of Functions |
|
1
|
| Number of Words |
|
33554432 words
|
| Number of Words Code |
|
32000000
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Organization |
|
32MX16
|
| Seated Height-Max |
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
|
1.7 V
|
| Terminal Finish |
|
TIN SILVER COPPER
|
| Width |
|
8 mm
|
|
|
|
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