S71WS512NC0BFWAP0
vs
S71WS512NC0BAIAP3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
SPANSION INC
Reach Compliance Code
compliant
compliant
Access Time-Max
80 ns
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Memory IC Type
MEMORY CIRCUIT
MEMORY CIRCUIT
Mixed Memory Type
FLASH+PSRAM
Number of Terminals
84
84
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-25 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA84,10X12,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies
1.8 V
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.00007 A
Supply Current-Max
0.054 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
3
1
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
84
ECCN Code
EAR99
HTS Code
8542.32.00.71
Additional Feature
PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
JESD-609 Code
e1
Length
11.6 mm
Memory Density
536870912 bit
Memory Width
16
Moisture Sensitivity Level
3
Number of Functions
1
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
ASYNCHRONOUS
Organization
32MX16
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
1.95 V
Supply Voltage-Min (Vsup)
1.7 V
Terminal Finish
TIN SILVER COPPER
Width
8 mm
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