S634000M-P
vs
KM23C4200A-12
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
GOULD AMI
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
,
|
DIP, DIP40,.6
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
60 ns
|
120 ns
|
| JESD-30 Code |
R-PDIP-T40
|
R-PDIP-T40
|
| Memory Density |
65536 bit
|
4194304 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
40
|
40
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
8KX8
|
512KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Current-Max |
0.08 mA
|
0.05 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
40
|
| Alternate Memory Width |
|
16
|
| JESD-609 Code |
|
e0
|
| Length |
|
52.43 mm
|
| Output Characteristics |
|
3-STATE
|
| Package Code |
|
DIP
|
| Package Equivalence Code |
|
DIP40,.6
|
| Seated Height-Max |
|
5.08 mm
|
| Standby Current-Max |
|
0.00005 A
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
15.24 mm
|
|
|
|
Compare S634000M-P with alternatives
Compare KM23C4200A-12 with alternatives