S34MS02G100BHV003
vs
S34MS02G100BHA010
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SKYHIGH MEMORY LTD
|
CYPRESS SEMICONDUCTOR CORP
|
| Package Description |
BGA-63
|
VFBGA,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| Length |
11 mm
|
11 mm
|
| Memory Density |
2147483648 bit
|
2147483648 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
8
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
63
|
63
|
| Number of Words |
268435456 words
|
268435456 words
|
| Number of Words Code |
256000000
|
256000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
105 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
256MX8
|
256MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
VFBGA
|
VFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Programming Voltage |
1.8 V
|
1.8 V
|
| Seated Height-Max |
1 mm
|
1 mm
|
| Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
| Width |
9 mm
|
9 mm
|
| Base Number Matches |
3
|
2
|
|
|
|
Compare S34MS02G100BHV003 with alternatives
Compare S34MS02G100BHA010 with alternatives