S2M vs BYG10K-E3/TR feature comparison

S2M Galaxy Microelectronics

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BYG10K-E3/TR Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY INTERTECHNOLOGY INC
Package Description SMB, 2 PIN SMA, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.15 V 1.1 V
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Pk Forward Current-Max 50 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 2 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 1000 V 800 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 55 2
Factory Lead Time 8 Weeks
Additional Feature FREE WHEELING DIODE
JEDEC-95 Code DO-214AC
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reverse Recovery Time-Max 4 µs
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)

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