S29GL512S11FHI023 vs S29GL512S11FHIV10 feature comparison

S29GL512S11FHI023 Cypress Semiconductor

Buy Now Datasheet

S29GL512S11FHIV10 Cypress Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP CYPRESS SEMICONDUCTOR CORP
Package Description FBGA-64
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.1.B.1 3A991.B.1.A
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 110 ns
Command User Interface YES
Common Flash Interface YES
Data Polling YES
JESD-30 Code R-PBGA-B64
JESD-609 Code e1 e1
Length 13 mm
Memory Density 536870912 bit
Memory IC Type EEPROM CARD EEPROM CARD
Memory Width 16
Moisture Sensitivity Level 3 3
Number of Functions 1
Number of Sectors/Size 512
Number of Terminals 64
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA64,8X8,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Page Size 16 words
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 260
Programming Voltage 2.7 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Seated Height-Max 1.4 mm
Sector Size 64K
Standby Current-Max 0.0001 A
Supply Current-Max 0.08 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Toggle Bit YES
Type NOR TYPE
Width 11 mm
Write Cycle Time-Max (tWC) 0.00006 ms
Base Number Matches 2 3

Compare S29GL512S11FHI023 with alternatives