S29GL512S11DHI010
vs
S29GL512S11FAI010
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
CYPRESS SEMICONDUCTOR CORP
Package Description
9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64
FBGA-64
Reach Compliance Code
compliant
compliant
ECCN Code
3A991.B.1.A
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
110 ns
Boot Block
BOTTOM/TOP
Command User Interface
YES
Common Flash Interface
YES
Data Polling
YES
JESD-30 Code
S-PBGA-B64
R-PBGA-B64
JESD-609 Code
e1
Length
9 mm
Memory Density
536870912 bit
536870912 bit
Memory IC Type
FLASH
FLASH
Memory Width
8
1
Moisture Sensitivity Level
3
Number of Functions
1
1
Number of Sectors/Size
512
Number of Terminals
64
64
Number of Words
67108864 words
536870912 words
Number of Words Code
64000000
512000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
64MX8
512MX1
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
LBGA
BGA
Package Equivalence Code
BGA64,8X8,40
Package Shape
SQUARE
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
GRID ARRAY
Page Size
16 words
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260
Programming Voltage
2.7 V
3 V
Qualification Status
Not Qualified
Ready/Busy
YES
Seated Height-Max
1.4 mm
Sector Size
64K
Standby Current-Max
0.0001 A
Supply Current-Max
0.08 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
BALL
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Toggle Bit
YES
Type
NOR TYPE
Width
9 mm
Base Number Matches
1
1
Compare S29GL512S11DHI010 with alternatives
Compare S29GL512S11FAI010 with alternatives