S29GL512S10DHIV10
vs
S29GL512S11FAI013
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
CYPRESS SEMICONDUCTOR CORP
|
| Package Description |
9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64
|
FBGA-64
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
100 ns
|
|
| Boot Block |
BOTTOM/TOP
|
|
| JESD-30 Code |
S-PBGA-B64
|
R-PBGA-B64
|
| JESD-609 Code |
e1
|
|
| Length |
9 mm
|
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
1
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
64
|
64
|
| Number of Words |
67108864 words
|
536870912 words
|
| Number of Words Code |
64000000
|
512000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
64MX8
|
512MX1
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
LBGA
|
BGA
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Programming Voltage |
2.7 V
|
3 V
|
| Seated Height-Max |
1.4 mm
|
|
| Supply Current-Max |
0.1 mA
|
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN SILVER COPPER
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Type |
NOR TYPE
|
|
| Width |
9 mm
|
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare S29GL512S10DHIV10 with alternatives
Compare S29GL512S11FAI013 with alternatives