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S29GL256S10FAIV23 vs S29GL256S10FHI023 feature comparison

S29GL256S10FAIV23 Infineon Technologies AG

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S29GL256S10FHI023 Cypress Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code compliant compliant
Factory Lead Time 2 Days
Samacsys Manufacturer Infineon
Access Time-Max 100 ns 100 ns
Command User Interface YES YES
Common Flash Interface YES YES
Data Polling YES YES
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PBGA-B64 R-PBGA-B64
Length 13 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH EEPROM CARD
Memory Width 16 16
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Sectors/Size 256 256
Number of Terminals 64 64
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 16MX16 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA64,8X8,40 BGA64,8X8,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Page Size 16 words 16 words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Programming Voltage 3 V 2.7 V
Ready/Busy YES YES
Seated Height-Max 1.4 mm 1.4 mm
Sector Size 64K 64K
Standby Current-Max 0.0001 A 0.0001 A
Supply Current-Max 0.1 mA 0.08 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Toggle Bit YES YES
Type NOR TYPE NOR TYPE
Width 11 mm 11 mm
Base Number Matches 1 1
Package Description FBGA-64
ECCN Code 3A991.B.1.B.1
HTS Code 8542.32.00.51
JESD-609 Code e1
Qualification Status Not Qualified
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Write Cycle Time-Max (tWC) 0.00006 ms
Memory » Flash Memories
Memory » EEPROMs

Compare S29GL256S10FAIV23 with alternatives

Compare S29GL256S10FHI023 with alternatives