RT1N434U
vs
MPS6530TIN/LEAD
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP
|
CENTRAL SEMICONDUCTOR CORP
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT-IN BIAS RESISTOR
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.6 A
|
| Collector-Emitter Voltage-Max |
50 V
|
40 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
40
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
300 MHz
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
No
|
| Date Of Intro |
|
2018-04-26
|
| Collector-Base Capacitance-Max |
|
5 pF
|
| JEDEC-95 Code |
|
TO-92
|
| JESD-30 Code |
|
O-PBCY-T3
|
| JESD-609 Code |
|
e0
|
| Number of Terminals |
|
3
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
0.625 W
|
| Power Dissipation-Max (Abs) |
|
0.625 W
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| VCEsat-Max |
|
0.5 V
|
|
|
|
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