RT1N434U
vs
MPS6530TIN/LEAD
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
CENTRAL SEMICONDUCTOR CORP
Package Description
,
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR
Collector Current-Max (IC)
0.1 A
0.6 A
Collector-Emitter Voltage-Max
50 V
40 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE
DC Current Gain-Min (hFE)
50
40
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
300 MHz
Base Number Matches
2
1
Rohs Code
Date Of Intro
2018-04-26
Collector-Base Capacitance-Max
5 pF
JEDEC-95 Code
TO-92
JESD-30 Code
O-PBCY-T3
JESD-609 Code
e0
Number of Terminals
3
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
CYLINDRICAL
Power Dissipation Ambient-Max
0.625 W
Power Dissipation-Max (Abs)
0.625 W
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
BOTTOM
Transistor Application
AMPLIFIER
VCEsat-Max
0.5 V
Compare RT1N434U with alternatives