There are no models available for this part yet.
Overview of MPS6530TIN/LEAD by Central Semiconductor Corp
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DE6B3KJ151KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
| DE6B3KJ471KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
| DE6E3KJ152MN4A | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
CAD Models for MPS6530TIN/LEAD by Central Semiconductor Corp
Part Data Attributes for MPS6530TIN/LEAD by Central Semiconductor Corp
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
CENTRAL SEMICONDUCTOR CORP
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Date Of Intro
|
2018-04-26
|
|
Collector Current-Max (IC)
|
0.6 A
|
|
Collector-Base Capacitance-Max
|
5 pF
|
|
Collector-Emitter Voltage-Max
|
40 V
|
|
Configuration
|
SINGLE
|
|
DC Current Gain-Min (hFE)
|
40
|
|
JEDEC-95 Code
|
TO-92
|
|
JESD-30 Code
|
O-PBCY-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-65 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
ROUND
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|
Package Style
|
CYLINDRICAL
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|
Polarity/Channel Type
|
NPN
|
|
Power Dissipation Ambient-Max
|
0.625 W
|
|
Power Dissipation-Max (Abs)
|
0.625 W
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
BOTTOM
|
|
Transistor Application
|
AMPLIFIER
|
|
Transistor Element Material
|
SILICON
|
|
Transition Frequency-Nom (fT)
|
300 MHz
|
|
VCEsat-Max
|
0.5 V
|