RN1423 vs PDTD114ET-TAPE-7 feature comparison

RN1423 Toshiba America Electronic Components

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PDTD114ET-TAPE-7 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.8 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 56
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz 100 MHz
Base Number Matches 1 1
Collector-Base Capacitance-Max 8 pF
VCEsat-Max 0.3 V

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