PDTD114ET-TAPE-7
vs
BCR198S
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
BUILT-IN BIAS RESISTOR RATIO IS 1
|
| Collector Current-Max (IC) |
0.5 A
|
0.07 A
|
| Collector-Base Capacitance-Max |
8 pF
|
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
56
|
70
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G6
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
3
|
6
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
190 MHz
|
| VCEsat-Max |
0.3 V
|
0.3 V
|
| Base Number Matches |
1
|
2
|
| HTS Code |
|
8541.21.00.75
|
| Power Dissipation Ambient-Max |
|
0.25 W
|
|
|
|
Compare PDTD114ET-TAPE-7 with alternatives
Compare BCR198S with alternatives