Findchips: Compare RN1405(TE85R2) vs RN1405S,LF(D

RN1405(TE85R2) vs RN1405S,LF(D feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Obsolete	Obsolete
Ihs Manufacturer	TOSHIBA CORP	TOSHIBA CORP
Package Description	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Pin Count	3
Reach Compliance Code	unknown	unknown
ECCN Code	EAR99	EAR99
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 0.0468	BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Collector Current-Max (IC)	0.1 A	0.1 A
Collector-Emitter Voltage-Max	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	80	80
JESD-30 Code	R-PDSO-G3	R-PDSO-G3
Number of Elements	1	1
Number of Terminals	3	3
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Polarity/Channel Type	NPN	NPN
Qualification Status	Not Qualified
Surface Mount	YES	YES
Terminal Form	GULL WING	GULL WING
Terminal Position	DUAL	DUAL
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Transition Frequency-Nom (fT)	250 MHz	250 MHz
Base Number Matches	1	1
HTS Code		8541.21.00.75
Collector-Base Capacitance-Max		6 pF
Operating Temperature-Max		150 °C
Power Dissipation Ambient-Max		0.2 W
Power Dissipation-Max (Abs)		0.2 W
VCEsat-Max		0.3 V
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors