RN1405S,LF(D
vs
RN1205(TPE4)
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
IN-LINE, R-PSIP-T3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.75
|
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 21.3636
|
BUILT IN BIAS RESISTOR RATIO IS 21.36
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Base Capacitance-Max |
6 pF
|
6 pF
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
80
|
80
|
JESD-30 Code |
R-PDSO-G3
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
0.2 W
|
|
Power Dissipation-Max (Abs) |
0.2 W
|
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
VCEsat-Max |
0.3 V
|
0.3 V
|
Base Number Matches |
1
|
1
|
Pin Count |
|
3
|
Qualification Status |
|
Not Qualified
|
|
|
|
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