RN1107FV vs DDTC144EUAQ-13-F feature comparison

RN1107FV Toshiba America Electronic Components

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DDTC144EUAQ-13-F Diodes Incorporated

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP DIODES INC
Package Description SMALL OUTLINE, R-PDSO-F3 GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-F3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.15 W 0.2 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Factory Lead Time 8 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101
Terminal Finish MATTE TIN

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