Findchips: Compare RN1101(TE85R) vs PDTC143EE,115

RN1101(TE85R) vs PDTC143EE,115 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Obsolete	Obsolete
Ihs Manufacturer	TOSHIBA CORP	NXP SEMICONDUCTORS
Package Description	SMALL OUTLINE, R-PDSO-G3	PLASTIC, EMT3, SMD, SC-75, SMPAK-3
Pin Count	3	3
Reach Compliance Code	unknown	compliant
ECCN Code	EAR99	EAR99
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)	0.1 A	0.1 A
Collector-Emitter Voltage-Max	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	30	30
JESD-30 Code	R-PDSO-G3	R-PDSO-G3
Number of Elements	1	1
Number of Terminals	3	3
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	260
Polarity/Channel Type	NPN	NPN
Qualification Status	Not Qualified	Not Qualified
Surface Mount	YES	YES
Terminal Form	GULL WING	GULL WING
Terminal Position	DUAL	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	30
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Transition Frequency-Nom (fT)	250 MHz
Base Number Matches	1	1
Rohs Code		Yes
Part Package Code		SC-75
Manufacturer Package Code		SOT416
HTS Code		8541.21.00.95
Factory Lead Time		4 Weeks
JESD-609 Code		e3
Moisture Sensitivity Level		1
Operating Temperature-Max		150 °C
Power Dissipation-Max (Abs)		0.15 W
Terminal Finish		TIN
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors