RMWB24001
vs
HMC261
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
RAYTHEON RF COMPONENTS
|
HITTITE MICROWAVE CORP
|
| Package Description |
DIE OR CHIP
|
DIE OR CHIP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Number of Functions |
1
|
1
|
| Package Equivalence Code |
DIE OR CHIP
|
DIE OR CHIP
|
| Power Supplies |
4 V
|
4 V
|
| Technology |
GAAS
|
GAAS
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Characteristic Impedance |
|
50 Ω
|
| Construction |
|
COMPONENT
|
| Gain |
|
8 dB
|
| Input Power-Max (CW) |
|
16 dBm
|
| JESD-609 Code |
|
e4
|
| Operating Frequency-Max |
|
40000 MHz
|
| Operating Frequency-Min |
|
20000 MHz
|
| Operating Temperature-Max |
|
85 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| RF/Microwave Device Type |
|
WIDE BAND LOW POWER
|
| Supply Current-Max |
|
90 mA
|
| Terminal Finish |
|
Gold (Au)
|
|
|
|
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