RJK0365DPA-02#J0B vs RJK03M6DPA-00-J5A feature comparison

RJK0365DPA-02#J0B Renesas Electronics Corporation

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RJK03M6DPA-00-J5A Renesas Electronics Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP RENESAS ELECTRONICS CORP
Part Package Code WPAK(3F)
Package Description SMALL OUTLINE, R-PDSO-N5 SMALL OUTLINE, R-PDSO-N5
Pin Count 8
Manufacturer Package Code PWSN0008DC
Reach Compliance Code compliant compliant
ECCN Code 5A002 EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0127 Ω 0.0126 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5 R-PDSO-N5
Number of Elements 1 1
Number of Terminals 5 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 120 A
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Avalanche Energy Rating (Eas) 7.2 mJ
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 25 W

Compare RJK0365DPA-02#J0B with alternatives

Compare RJK03M6DPA-00-J5A with alternatives