RJK0365DPA-02#J0B vs IRFR3708 feature comparison

RJK0365DPA-02#J0B Renesas Electronics Corporation

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IRFR3708 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP INFINEON TECHNOLOGIES AG
Part Package Code WPAK(3F)
Package Description SMALL OUTLINE, R-PDSO-N5 SMALL OUTLINE, R-PSSO-G2
Pin Count 8
Manufacturer Package Code PWSN0008DC
Reach Compliance Code compliant compliant
ECCN Code 5A002 EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0127 Ω 0.0125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 5 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 244 A
Surface Mount YES YES
Terminal Form NO LEAD GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 5
Avalanche Energy Rating (Eas) 213 mJ
JEDEC-95 Code TO-252AA
Moisture Sensitivity Level 1

Compare RJK0365DPA-02#J0B with alternatives

Compare IRFR3708 with alternatives